Photomodulated electron-spin resonance in amorphous silicon
نویسندگان
چکیده
منابع مشابه
MAGNETISATION AND ELECTRON SPIN RESONANCE STUDIES OF TETRAHEDRAL AMORPHOUS CARBON
The magnetisation and electron spin resonance (ESR) spectrum of two specimens of tetrahedral amorphous carbon (ta-C), deposited from a filtered cathodic arc, were measured over a wide temperature range. The magnetisation was found to consist of superparamagnetic, paramagnetic and diamagnetic contributions. The superparamagnetic contribution resembled that recently found in carbon prepared from ...
متن کاملQuantitative photomodulated thermoreflectance studies of germanium and silicon semiconductors
The frequency response of the photomodulated thermoreflectance (PMTR) signal has been used to characterize various semiconductor samples, including crystalline Ge/Si, ion-implanted Ge, and amorphous Si. Theoretical modelling has allowed the deconvolution of electron-hole plasmaand thermal-wave contributions to the signal throughout the entire frequency range.
متن کاملPoint Defects in Amorphous and Nanocrystalline Fluorinated Silicon Films
Nanocrystalline fluorinated silicon films are studied by using Raman spectroscopy, electron paramagnetic resonance, Fourier-transformed infrared spectroscopy, atomic force microscopy, nonlinear laser spectroscopy, and photoluminescence. Electrical properties of nanocrystalline silicon and amorphous silicon films were compared. The field-assisted migration of point defects is dramatic for durabi...
متن کاملDefects in silicon nanowires
Defects in silicon nanowires have been investigated using the electron spin resonance ESR method. The ESR signals consist of three features: a strong resonance at g=2.002 49, a weak line at g=2.000 48, and a broad feature at g=2.005 41. From the saturation behavior and oxidation-related and temperature dependence analysis, we ascribe that the strong resonance corresponds to the EX center and th...
متن کاملTritiated amorphous silicon betavoltaic devices - Circuits, Devices and Systems, IEE Proceedings [see also IEE Proceedings G- Circuits, Devices and
The introduction of tritium into hydrogenated amorphous silicon has given rise to a novel material with interesting physical properties and potential applications. Tritium undergoes radioactive decay, transforming into He and emitting an electron with average energy 5.7keV, at a rate equivalent to a half-life of 12.3 years. The decay of tritium results in the creation of electron– hole pairs an...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017